Method of growing compound semiconductor

Details Method of growing compound semiconductor Method of growing compound semiconductor

1993-09-08

1995-03-21

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

105126, 105132, H01L 2120

Patent

active

053995228

ABSTRACT:
A first monocrystalline group III-V compound semiconductor layer is formed on an Si substrate. The surface of the first monocrystalline group III-V compound semiconductor layer is polished. A second monocrystalline group III-V compound semiconductor layer is grown on the polished surface by a metal organic chemical vapor deposition, by using as a group III source material at least partially a source material of group III atoms bonded to ethyl radical at the initial stage of growth, and thereafter by using as the group III source material a source material of group III atoms bonded to methyl radical. A grown layer with a flat surface can be obtained. The surface flatness can be improved further by adding In as a group III element.

REFERENCES:
patent: 4008106 (1977-02-01), Gutierrez et al.
patent: 4174422 (1979-11-01), Mattews
patent: 4965224 (1990-10-01), Horikawa et al.
Haruo et al., "Manufacture of Group III-V Compound Semiconductor", Patent Abstracts of Japan, vol. 008, No. 200 (E-266), Sep. 13, 1984 & JP-A-59 087814 (Hitachi Seisakusho KK) May 21, 1994.

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