Method for manufacturing improved lightly doped diffusion (LDD)

Details Method for manufacturing improved lightly doped diffusion (LDD) Method for manufacturing improved lightly doped diffusion (LDD)

1993-08-09

1995-03-21

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 44, 437 57, 437 58, H01L 21336

Patent

active

053995147

ABSTRACT:
A semiconductor device comprises at least one p-type and n-type LDD transistors in a pair and a standard (non-LDD) transistor in the same substrate. Appropriate p-wells and n-wells are formed in the substrate, gate electrodes deposited, p-type and n-type first diffusions made, a silicon nitride layer is deposited and removed to leave behind sidewalls on the gates, p-type and n-type second diffusions are made in the LDD transistors, the silicon nitride sidewalls are washed away with a solvent that attacks only the silicon nitride, a third diffusion is made in the standard (non-LDD) transistor(s), a phosphosilicate glass (PSG) layer is applied, contact holes are etched, and an aluminum metalization layer is applied and etched for the interconnect.

REFERENCES:
patent: 4562638 (1986-01-01), Schwabe et al.
patent: 4722909 (1988-02-01), Parrillo et al.
patent: 4740484 (1988-04-01), Norstrom et al.
patent: 4745086 (1988-05-01), Parrillo et al.
patent: 4753898 (1988-06-01), Parrillo et al.
patent: 4764477 (1988-08-01), Chang et al.
patent: 4775642 (1988-10-01), Chang et al.
patent: 5023190 (1991-06-01), Lee et al.
patent: 5024960 (1991-06-01), Haken
patent: 5087582 (1992-02-01), Campbell et al.
patent: 5098855 (1992-03-01), Komori et al.
patent: 5122474 (1992-06-01), Harrington, III
patent: 5153144 (1992-10-01), Komori et al.
patent: 5170232 (1992-12-01), Narita
patent: 5246872 (1993-09-01), Mortensen
patent: 5262344 (1993-11-01), Mistry
Wolf et al. Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, pp. 209-210.

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