Method for repair of buried contacts in MOSFET devices

Details Method for repair of buried contacts in MOSFET devices Method for repair of buried contacts in MOSFET devices

1983-09-01

1984-12-25

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 29591, 357 59, 357 67, H01L 2188

Patent

active

044894791

ABSTRACT:
Contacts between polysilicon conductors on the surface of a silicon wafer and doped regions underlying them in the wafer, rendered defective by the growth of a thin intervening oxide layer between conductors and diffusions, are repaired by depositing dots of aluminum on the conductors in the contact areas and annealing the wafer so as to drive traces of the aluminum through the conductors and the intervening oxide into the underlying doped regions in the wafer.

REFERENCES:
patent: 3806361 (1974-04-01), Lehner
patent: 4271424 (1981-06-01), Inayoshi et al.
patent: 4335502 (1982-06-01), Richman

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