Process for producing a three-dimensional semiconductor device

Details Process for producing a three-dimensional semiconductor device Process for producing a three-dimensional semiconductor device

1982-09-28

1984-12-25

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 148 15, H01L 2166

Patent

active

044894783

ABSTRACT:
At present, the majority of semiconductor devices are two-dimensional large-scale integration (LSI) semiconductor devices in which the semiconductor elements are arranged in a semiconductor layer in a two-dimensional manner. An aim of the techniques of production of semiconductor devices is to achieve, in the future, a super high integration amounting to 16 M bits or more per chip. For attaining such a super high integration, a multilayer semiconductor device must be produced. A method for producing a three-dimensional LSI semiconductor device prevents wasteful formation of semiconductor layers and insulating films. The method includes the step of forming, in a first semiconductor layer, a monitoring device for evaluating the circuit function of the semiconductor elements in the first semiconductor layer and subsequently forming another semiconductor layer above the first semiconductor layer. A preferred embodiment also includes the steps of: forming the impurity regions of the semiconductor elements by ion implantation; activating the implanted impurity ions by energy beam irradiation; and forming the insulating material regions of the semiconductor elements by high-pressure oxidation, or by low-temperature sputtering.

REFERENCES:
patent: 4144493 (1979-03-01), Lee et al.

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