Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Patent
1991-10-31
1993-11-09
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
257 13, 257 88, 257 96, 372 45, H01L 3300
Patent
active
052605892
ABSTRACT:
A semiconductor device having a reflecting layer consisting of unit semiconductors each consisting of two or more semiconductor films of different compositions. The thickness of the unit semiconductors varies continuously or in steps in the direction of thickness of the reflecting layer, preferably decreases in the direction toward the light incidence surface of the layer. For example, the reflecting layer has a varying-thickness portion whose unit semiconductors have a continuously varying thickness, and may include an iso-thickness portion whose semiconductors have the same thickness. The composition at the interface of the adjacent films preferably changes to mitigate a lattice mismatch which causes crystal defects of the layer.
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Hirotani Masumi
Kato Toshihiro
Saka Takashi
Susawa Hiromoto
Yamauchi Norikatsu
Daido Tokushuko Kabushiki Kaisha
Hille Rolf
Tran Minhloan
Yamauchi Norikatsu
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