Semiconductor integrated circuit device and a method of manufact

Details Semiconductor integrated circuit device and a method of manufact Semiconductor integrated circuit device and a method of manufact

1994-12-02

1996-12-31

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257749, 257763, 257764, 257770, 257771, 257915, 257924, 437180, 437189, 437192, 437196, H01L 2348, H01L 2144

Patent

active

055897126

ABSTRACT:
A semiconductor integrated circuit device includes a substrate formed with semiconductor elements and a metal wiring having a laminated structure and provided on the substrate. The metal wiring includes a first layer including aluminum as a main component, and a second layer formed on the first layer. The second layer includes titanium and nitrogen as main components. The second layer includes more titanium than nitrogen in number of atoms. A third layer may be formed between the first and second layers. The third layer includes a compound of aluminum and titanium as a main component. A fourth layer may further be formed between the second and third layers. The fourth layer includes titanium as a main component and is free of aluminum.

REFERENCES:
patent: 4875088 (1989-10-01), Egawa et al.
patent: 5049975 (1991-09-01), Ajika et al.
patent: 5345108 (1994-09-01), Kikkawa

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