Method of manufacturing a semiconductor device having a silicon

Details Method of manufacturing a semiconductor device having a silicon Method of manufacturing a semiconductor device having a silicon

1989-10-12

1991-02-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437100, 437 31, 437 41, 437 62, 148DIG148, 357 16, H01L 21465

Patent

active

049944134

ABSTRACT:
A method of forming a semiconductor device on a silicon carbide layer comprises steps of introducing an impurity into selected parts of the silicon carbide layer, and oxidizing the silicon carbide layer by annealing in an atmosphere containing oxygen.

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Marsh et al.; "Ion-Implanted Junctions and Conducting Layers in SiC"; Radiation Effects 1970, vol. 6, pp. 301-312.
Shibahara et al.; "Inversion-Type MOS Field Effect Transistors Using CVD Grown Cubic SiC on Si"; Jap. J. Appl. Phys. 23, L863 (1984).
Ghandhi; "VLSI Fabrication Principles"; 1983; pp. 430-431, 575.
Furukawa et al.; "Insulated-Gate and Junction-Gate FET's of CVD-Grown .beta.-SiC"; IEEE Elec. Device Letters, vol. EDL-8, No. 2, Feb. 1987.
IEEE Electron Device Letters, vol. EDL-7, No. 12, Dec. 1986, pp. 692-693, IEEE, New York, U.S.; K. Shibahara et al. "Fabrication of Inversion-Type n-Channel MOSFET's Using Cubic-SiC on Si(100)".

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