Fishing – trapping – and vermin destroying
Patent
1990-03-26
1991-02-19
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 24, 437 37, 437229, 437235, H01L 2978
Patent
active
049944010
ABSTRACT:
A source electrode and a drain electrode are formed apart on an insulating substrate, and a semiconductor layer is formed on the substrate between the source and drain electrodes. An insulating organic molecular film is formed all over the source and drain electrodes and the semiconductor layer. Ions are implanted into a selected top surface region of the insulating organic molecular film, corresponding to the semiconductor layer, by which chains of molecules in the surface region are cut to form free carbon, providing a conductive gate electrode.
REFERENCES:
patent: 4332075 (1982-06-01), Ota et al.
patent: 4398340 (1983-08-01), Brown
patent: 4459739 (1984-07-01), Shepherd et al.
patent: 4502204 (1985-03-01), Togashi et al.
patent: 4727044 (1988-02-01), Yamazaki
patent: 4733284 (1988-03-01), Aoki
patent: 4746628 (1988-05-01), Takafuji et al.
patent: 4822751 (1989-04-01), Ishizu et al.
patent: 4849797 (1989-07-01), Ukai et al.
Seki, "Method of Matching the Gate to the Source-Drain Gap in a TFT", IBM Technical Disclosure Bulletin, vol. 7, No. 4, Sep. 1964, pp. 338-339.
Gallagher, "Amorphous Silicon Enlarges LCDs", Electronics International, vol. 55, May 1982, No. 10, pp. 94, 96.
Sze, Physics of Semiconductor Devices, John Wiley & Sons, 1969, pp. 568-586.
Chaudhuri Olik
Hosiden Electronics Co. Ltd.
Wilczewski M.
LandOfFree
Method of making a thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making a thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a thin film transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1143273