Method of making laser generated I. C. pattern for masking

Details Method of making laser generated I. C. pattern for masking Method of making laser generated I. C. pattern for masking

1991-08-21

1993-11-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437173, 437192, 437193, 437935, H02L 21467, H02L 21428

Patent

active

052602354

ABSTRACT:
An improved method of patterning layers on a semiconductor element by use of laser processing. A thin film of amorphous silicon is deposited on a fused quartz window. Selected regions of the amorphous silicon are crystallized by a laser beam focused through the quartz window. The non-crystallized silicon is removed forming an opaque layer of crystallized silicon in the desired pattern. The quartz window is used as a window to a reactive gas containment chamber containing semiconductor devices to be patterned. By irradiating the chamber with ultraviolet light through the patterned quartz window, the semiconductor element is etched in the regions exposed to the light.

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patent: 5104481 (1992-04-01), Dooley et al.

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