Method of manufacturing buried heterostructure semiconductor las

Details Method of manufacturing buried heterostructure semiconductor las Method of manufacturing buried heterostructure semiconductor las

1992-07-07

1993-11-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437105, 437107, 372 43, 372 45, 372 46, H01L 2120

Patent

active

052602303

ABSTRACT:
According a method of manufacturing a buried heterostructure semiconductor laser, an active layer and a p-type cladding layer are sequentially deposited on an n-type group III-V semiconductor layer by metalorganic vapor phase epitaxy. A surface of the deposited layer is masked in a stripe shape, and the cladding layer, the active layer, and the semiconductor layer are selectively and partially etched to form a mesa structure. A p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5.times.10.sup.18 atoms.multidot.cm.sup.-3, a p-type cladding layer, and a p-type cap layer are sequentially deposited on an entire upper surface of the mesa structure by the metalorganic vapor phase epitaxy.

REFERENCES:
T. Kawabata et al., "Metalorganic Chemical Vapor Deposition of InGaAsP/InP Layers and Fabrication of 1.3-.mu.m Planar Buried Heterostructure Lasers", J. Appl. Phys., vol. 64, No. 7, Oct. 1, 1988, pp. 3684-3688.
T. Sanada et al., "Planar-Embedded InGaAsP/InP Heterostructure Laser With a Semi-Insulating InP Current-Blocking Layer Grown by Metalorganic Chemical Vapor Deposition", Appl. Phys. Lett., vol. 51, No. 14, Oct. 5, 1987, pp. 1054-1056.
A. W. Nelson et al., "High-Power, Low-Threshold BH Lasers Operating at 1.52 .mu.m Grown Entirely by Movpe", Electronics Letters 26th Sep. 1985 vol. 21 No. 20, pp. 888-889.
Y. Itaya et al., "Low-Threshold Operation of 1.5.mu.m Buried-Heterostructure DFB Lasers Grown Entirely by Low-Pressure Movpe", Electronics Letters Feb. 26, 1987 vol. 23 No. 5 pp. 193-194.
M. Hirao et al., "Fabrication and Characterization of Narrow Stripe InGaAsP/InP Buried Heterostructure Lasers", J. Appl. Phys., vol. 51, No. 8, Aug. 1980, pp. 4539-4540.
I. Mito et al., "InGaAsP Planar Buried Heterostructure Laser Diode (PBH-LD) With Very Low Threshold Current", Electronics Letters Jan. 7, 1982, vol. 18 No. 1, pp. 2-3.
I. Mito et al., "Double-Channel Planar Buried Heterostructure Laser Diode With Effective Current Confinement", Electronics Letters Oct. 28, 1982, vol. 18, No. 22, pp. 953-954.

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