Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1992-11-10
1995-05-02
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257461, H01L 2968, H01L 2978, H01L 2714, H01L 3100
Patent
active
054122430
ABSTRACT:
A photoelectric conversion apparatus having a semiconductor area of a first type and a plurality of semiconductor areas of a second type for storing carriers produced by optical excitation. Adjacent semiconductor areas of the second type are used as main electrode areas, and a portion of the semiconductor area of the first type between the adjacent semiconductor areas of the second type is used as a channel area to form an insulated gate type transistor. The channel area is formed as deep as or deeper than the adjacent semiconductor areas of the second type, and is of higher impurity density than the semiconductor area of the first type and lower impurity density than the semiconductor areas of the second type.
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Canon Kabushiki Kaisha
Jackson Jerome
Meier Stephen D.
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