Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1993-01-27
1995-05-02
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, 257611, H01L 2980, H01L 29225
Patent
active
054122317
ABSTRACT:
Mobility includes a semiconductor substrate, a non-doped layer applied on the semiconductor substrate, an electron supply layer applied on the non-doped layer, and a metal gate layer applied on the electron supply layer. The said electron supply layer has a structure in which impurity atoms serving as electron supply sources as well as scattering sources are arranged regularly, so that the structure is doped in an organized manner. Adjacent impurity atoms are separated from each other in a first direction, parallel to a direction in which an electron wave travels, by a first distance which is not larger than half of the wavelength of an electron wave. In a second direction which is perpendicular to the first direction, adjacent impurity atoms are seperated by a second distance which is not larger than the wavelength of an electron wave. In a third direction which is perpendicular both to the first and second directions, adjacent impurity atoms are separated by a third distance which is not larger than the wavelength of an electron wave. When the influence of the coherence length an electron cannot be ignored, the first, second and third distances are made not larger than half of the coherence length of an electron, and preferably not larger than a fifth of the coherence length.
REFERENCES:
patent: 4613541 (1986-09-01), Isoda
patent: 4882609 (1989-11-01), Schubert et al.
Japanese Journal of Applied Physics, vol. 19, No. 5, May 1980, pp. L225-L227, "A New Field-Effect Transistor With Selectively Doped GaAs
-Al.sub.x Ga.sub.1-x As Heterojunctions", Mimura et al.
Applied Physics Letters, vol. 33, No. 7, Oct. 1, 1978, pp. 665-667, "Electron Mobilities In Modulation-Doped Semiconductor Heterojunction Superlattices", Dingle et al.
Prenty Mark V.
Tokyo Institute of Technology
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