Method for preparing molten silicon melt from polycrystalline si

Details Method for preparing molten silicon melt from polycrystalline si Method for preparing molten silicon melt from polycrystalline si

1995-07-25

1996-12-31

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 18, 117 33, 264345, C30B 1502

Patent

active

055889930

ABSTRACT:
A process for preparing a molten silicon melt from polycrystalline silicon for use in producing single crystal silicon by the Czochralski method is disclosed. Polycrystalline silicon is initially loaded into a Czochralski crucible, and melted to form a partially melted charge which includes both molten silicon and unmelted polycrystalline silicon. The molten silicon has an upper surface above which the unmelted polycrystalline silicon is partially exposed. Granular-polycrystalline silicon is fed onto the exposed unmelted polycrystalline silicon in a manner sufficient to allow the granular-polycrystalline silicon to dehydrogenate while it is resident on the surface of the unmelted polycrystalline silicon and before it becomes immersed in the molten silicon. The granular-polycrystalline silicon and the unmelted polycrystalline silicon are then fully melted to form a molten silicon melt. The method results in improved zero defect yield, throughput and mean hot cycle times during the production of single crystal silicon ingots.

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