Three dimensional integrated circuits with lift-off

Details Three dimensional integrated circuits with lift-off Three dimensional integrated circuits with lift-off

1992-04-08

1994-01-18

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

257 85, 257 98, 257443, 257 84, 372 50, 437915, 437944, H01L 2714

Patent

active

052801845

ABSTRACT:
Three dimensional communication within an integrated circuit occurs via electromagnetic communication between emitters and detectors situated throughout the integrated circuit. The emitters and detectors can be produced in a diode or laser configuration. The emitters and detectors can be fabricated via novel lift-off and alignable deposition processes. Integrated circuit layers, including silicon and gallium arsenide, are transparent to the electromagnetic signals propagated from the emitter and received by the detector. Furthermore, arrays of optical detectors can be implemented to perform image processing with tremendous speed. Processing circuitry can be situated directly below the optical detectors to process in massive parallel signals from individual optical detectors.

REFERENCES:
patent: 4152713 (1979-05-01), Copeland, III et al.
patent: 4667212 (1987-05-01), Nakamura
patent: 4670765 (1987-06-01), Nakamura et al.
patent: 4672577 (1987-06-01), Hirose et al.
patent: 4737833 (1988-04-01), Tabei
patent: 4899204 (1990-02-01), Rosen et al.
patent: 5093879 (1992-03-01), Bregman et al.

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