Fishing – trapping – and vermin destroying
Patent
1994-07-27
1995-11-21
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 60, 437919, 437242, H01L 2170
Patent
active
054686873
ABSTRACT:
A method for low temperature annealing (oxidation) of high dielectric constant Ta.sub.2 O.sub.5 thin films uses an ozone enhanced plasma. The films produced are especially applicable to 64 and 256 Mbit DRAM applications. The ozone enhanced plasma annealing process for thin film Ta.sub.2 O.sub.5 reduces the processing temperature to 400.degree. C. and achieves comparable film quality, making the Ta.sub.2 O.sub.5 films more suitable for Ultra-Large Scale Integration (ULSI) applications (storage dielectric for 64 and 256 Megabit DRAMs with stack capacitor structures, etc.) or others that require low temperature processing. This low temperature process is extendable to other high dc and piezoelectric thin films which may have many other applications.
REFERENCES:
patent: 4891682 (1990-01-01), Nishiok et al.
patent: 5079191 (1992-01-01), Shiwuki et al.
patent: 5142438 (1992-08-01), Reinber et al.
patent: 5234556 (1993-08-01), Oishi et al.
patent: 5316982 (1994-05-01), Taniguchi
patent: 5330935 (1994-07-01), Dobuzinsky et al.
patent: 5352623 (1994-10-01), Kamiyama
patent: 5362632 (1994-11-01), Matuewe
Carl Dan
Dobuzinsky David M.
Nguyen Son V.
Nguyen Tue
Chaudhuri Olik
International Business Machines - Corporation
Mulpuri S.
Peteraske Eric W.
LandOfFree
Method of making TA.sub.2 O.sub.5 thin film by low temperature o does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making TA.sub.2 O.sub.5 thin film by low temperature o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making TA.sub.2 O.sub.5 thin film by low temperature o will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1136848