Method for manufacturing a device separation region for semicond

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H01L 2176

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054686750

ABSTRACT:
Method for manufacturing a device separation region for semiconductor devices which separates regions electrically from each other stably, and allows realization of large scale integration with high reliability. When forming a device separation region 10 selectively on a substrate 1 by LOCOS method by controlling thermal oxidation, a device separation region 10 is formed to thickness t2 thinner than a predetermined thickness (FIG. 4C). A second silicon nitride layer 5 is formed onto the whole surface of the substrate 1 (FIG. 5A). A photo resist layer 8 is formed on the second silicon nitride layer 5, and the second silicon nitride layer 5 is partially removed by chemical etching (FIG. 5B). By carrying out thermal oxidation again after the etching, the device separation region 10 is formed to the predetermined thickness t (FIG. 5C). In that, device separation is accomplished stably. Also, the device formation region 15 can be formed larger than a conventional one since the occurrence of bird's beak is suppressed by controlling thermal oxidation when forming the device separation region 10. As a result, large scale integration can be realized with high reliability.

REFERENCES:
Wolf, S. et al, Silicon Processing for the VLSI Era, vol. 1: Process Technology Lattice Press 1986, pp. 168-169.
Wolf, S., Silicon Processing for the VLSI Era, vol. 2: Process Integration, Lattice Press, 1990, pp. 238-239.
"Laterally Sealed LOCOS Isolation", by M. Ghezzo, M. J. Kim, J. F. Norton, and R. J. Saia, Journal of the Electrochemical Society, vol. 134, No. 6, Jun. 1987.
"A New Self-Aligned Planar Oxidation Technology", by Kazuhito Sakuma, Yoshinobu Arita, and Masanobu Doken, Journal of the Electrochemical Society, vol. 134, No. 6, Jun. 1987.
"Twin-White-Ribbon Effect and Pit Formation Mechanism in PBLOCOS", Electrochemical Society, vol. 138, No., Jul. 1991.

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