Thin film resistor and method of fabrication

Details Thin film resistor and method of fabrication Thin film resistor and method of fabrication

1993-06-29

1995-11-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437918, 437142, 338308, 20419221, H01C 1012

Patent

active

054686725

ABSTRACT:
A method of fabricating a thin film resistor includes a step of sputter depositing a thin film of resistive material such as a chromium diboride compound on an insulative substrate using an argon sputter gas having a percentage of dopant such as nitrogen selected to optimize a trade off between desirably increasing the thickness of the film and undesirably increasing the temperature coefficient of resistance. A cap layer having a solid diffusant such as free chromium is deposited over the thin film of resistive material. The cap layer serves to protect the thin film of resistive material during subsequent patterning of conductors using wet etching, and also the solid diffusant diffuses into the resistive material during subsequent thermal treatment to drive the temperature coefficient of resistance back down.

REFERENCES:
patent: 4510178 (1985-04-01), Paulsan et al.
patent: 4759836 (1988-07-01), Hill et al.
patent: 4952904 (1990-08-01), Johnson et al.
patent: 5023589 (1991-06-01), Hall
patent: 5173440 (1992-12-01), Tsunashima et al.

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