Method of manufacturing a complementary bipolar transistor

Details Method of manufacturing a complementary bipolar transistor Method of manufacturing a complementary bipolar transistor

1993-02-19

1995-05-02

Thomas, Tom

Fishing, trapping, and vermin destroying

437 26, 437 64, 437 67, 148DIG10, H01L 21265

Patent

active

054118980

ABSTRACT:
An n type buried layer (2b) lying in the lower part of a PNP transistor (101a) is lower in impurity concentration than an n.sup.+ type buried layer (2a) lying in the lower part of an NPN transistor (100). A p.sup.+ type buried layer (4a) is formed thick on the n type buried layer (2b) and insulated from the n.sup.+ type buried layer (2a) by an isolation trench (7). A breakdown voltage at a junction of the p.sup.+ type buried layer (4a) and the n type buried layer (2b) can be improved and, accordingly, the breakdown voltage of the whole device being improved. Low-controlled collector resistance of the PNP transistor (101a) prevents an amplification factor from decreasing.

REFERENCES:
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patent: 4897363 (1990-01-01), Suda
patent: 4910160 (1990-03-01), Jennings et al.
patent: 4940671 (1990-07-01), Small et al.
patent: 5110749 (1992-05-01), Ikeda
patent: 5175607 (1992-12-01), Ikeda

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