Method of making multilayer base heterojunction device having on

Details Method of making multilayer base heterojunction device having on Method of making multilayer base heterojunction device having on

1993-12-07

1995-11-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437126, 437128, 437132, 437133, 148DIG72, 257198, 257592, H01L 21265

Patent

active

054686580

ABSTRACT:
This is a p-n junction device and the device comprises: a substrate 10 composed of a semiconductor material; a heavily doped n type sub-collector layer 14 over the substrate; a n type collector layer 16 over the sub-collector layer; a heavily doped p type first base layer 18, over the collector layer; a p type second base layer 20, substantially thinner than the first base layer, over the first base layer, with the second base layer being less heavily doped than the first base layer; and a n type emitter layer 24 over the second base layer, whereby, the second base layer serves as a diffusion barrier between the base and the emitter. Other devices and methods are also disclosed.

REFERENCES:
patent: 4573064 (1986-02-01), McLevige et al.
patent: 4593305 (1986-06-01), Kurata et al.
patent: 4672414 (1987-06-01), Gabriel et al.
patent: 4794440 (1988-12-01), Capasso et al.
patent: 4845535 (1989-07-01), Yamanishi et al.
patent: 4873558 (1989-10-01), Antreasyan
patent: 4889831 (1989-12-01), Ishii et al.
patent: 4948752 (1990-08-01), Geissberger et al.
patent: 4987468 (1991-01-01), Thornton
patent: 5024958 (1991-06-01), Awano
patent: 5077231 (1991-12-01), Plumton et al.
patent: 5132764 (1992-07-01), Bayraktaroglu
patent: 5177583 (1993-01-01), Endo et al.
patent: 5192698 (1993-03-01), Schuermeyer et al.
H. Ito, "MOCVD Grown Carbon-Doped Graded-Base AlGaAs/GaAs HBTs, " Electronics Letters, vol. 26, No. 23, Nov. 8, 1990, pp. 1977-1988.
W. S. Hobson, et al., "Carbon-Doped Base GaAs-AlGaAs HBT's Grown by MOMBE and MOCVD Regrowth, " IEEE Electron Device Letters, vol. 11, No. 6, June 1990, pp. 241-243.
L. W. Yin, et al., "Improved Breakdown voltage in GaAs MESFET's Utilizing Surface Layers of GaAs Grown at a Low Temperature by MBE, " IEEE Electron Device Letters, vol. 11, No. 12, Dec. 1990, pp. 561-563.
R. Fischer, et al., "GaAs/AlGaAs MODFET's Grown on (100) GE, " IEEE Electron Device Letters, vol. 5, No. 11, Nov. 1984, pp. 456-457.
D. Barker, et al., "Extremely High Peak Specific Transconductance AlGaAs/GaAs Heterojunction Bipolar Transistors, " IEEE Electron Device Letters, vol. 10, No. 7, Jul. 1989, pp. 313-315.
Herbert Kroemer, "(Invited) Heterostructures for Everything: Device Principle of the 1980's", Proceedings of the 12 th Conference on Solid State Devices, Tokyo, 1980; J. Jrnl. of Appl. Phys., pp. 9-13, vol. 20, 1981.
Dubon, et al., "Double Heterojunction GaAs-GaAlAs Bipolar Transistors Grown by MOCVD For Emitter Coupled Logic Circuits", IEDM, pp. 689-693, 1983.
Hafizi, et al., "Reliability Analysis of GaAs/AlFaAs HBTs, Under Forward Current/Temperature Stress", IEEE GaAS IC Symposium, pp. 329-332, 1990.
Asbeck, et al., "GaAsAs/GaAs Heterojunction Bipolar Transistors: Issues and Prospects for Application", IEEE Transactions on Electron Devices, pp. 2032-2042, vol. 36, No. 10, Oct. 1989.

Affiliated with

Also associated with

Rating

Method of making multilayer base heterojunction device having on does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making multilayer base heterojunction device having on, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making multilayer base heterojunction device having on will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1136486