Method for forming miniature contacts of highly integrated semic

Details Method for forming miniature contacts of highly integrated semic Method for forming miniature contacts of highly integrated semic

1993-03-01

1994-01-18

Quach, T. N.

Fishing, trapping, and vermin destroying

437 52, 437 59, 437193, 437228, 156644, H01L 2131

Patent

active

052799891

ABSTRACT:
A method of forming miniature contacts over the sources and drains of the MOSFETs of a highly integrated semiconductor device which includes the steps of: applying a thick insulation layer over the MOSFETs, applying a first polysilicon layer, a subsequent insulation layer and a photoresist film having predetermined thickness over the original thick insulation layer. The photoresist film is removed at its portions disposed above the sources and drains to form a photoresist film pattern and the subsequent insulation layer is etched in order to form an insulation pattern. The first polysilicon layer is etched using the insulation layer pattern as a mask, in order to form a first polysilicon layer pattern. The insulation layer pattern is removed and the thick insulation layer is etched using the first polysilicon layer pattern as a mask. A base insulation layer is etched, thus forming contact holes through which the sources and drains are exposed. Subsequently, a second polysilicon layer with a smooth upper surface is deposited over first polysilicon layer pattern and the contact holes, and a predetermined thickness portion of the second polysilicon layer and the first polysilicon layer pattern are removed thus form contact pads respectively connected to the sources and drains. Conductive layers can then be applied to the contact pads for predetermined electrodes or wirings.

REFERENCES:
patent: 4996167 (1991-02-01), Chen
patent: 5010039 (1991-04-01), Ku et al.
patent: 5043298 (1991-08-01), Yamada et al.
Auer, S., et al., "Limitations of Trench . . . ", Ext. Abs. 22nd (1990 International) Conf. Solid State Devices and Materials, Senuai, 1990, pp. 401-404.

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