Method of manufacturing a thin-film semiconductor device having

Fishing – trapping – and vermin destroying

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437101, 437192, 437909, H01L 2184

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active

052799808

ABSTRACT:
In a reverse staggered MOS transistor, a gate electrode and a signal wiring connected to the gate electrode consist of a wiring base on the substrate side and an overlying wiring part superposed on the wiring base. The wiring base is composed of a conductive material, e.g., tantalum-molybdenum alloy, which has a body-centered cubic lattice structure with its lattice constants the same as or approximately identical to those of .alpha.-tantalum. Being continuously deposited on the wiring base by sputtering, the overlying wiring part also assumes the .alpha.-tantalum form inheriting the lattice structure of the wiring base. In the case of a staggered MOS transistor, source and drain electrodes and respective signal wirings connected to the source and drain electrodes take the similar structure.

REFERENCES:
patent: 3878079 (1975-04-01), Schauer
patent: 4364099 (1982-12-01), Koyama et al.
patent: 4905066 (1990-02-01), Dohjo et al.
patent: 4975760 (1990-12-01), Dohjo et al.
patent: 5028551 (1991-07-01), Dohjo et al.
patent: 5067007 (1991-11-01), Kanji et al.
patent: 5107355 (1992-04-01), Satoh et al.
patent: 5170244 (1992-12-01), Dohjo et al.

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