Method of making masks for phase shifting lithography to avoid p

Details Method of making masks for phase shifting lithography to avoid p Method of making masks for phase shifting lithography to avoid p

1994-09-26

1995-11-21

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430314, 430322, 430323, 430324, G03F 900

Patent

active

054685788

ABSTRACT:
An improved method of fabricating a phase shifting mask suitable for semiconductor manufacture includes the steps of identifying phase conflict areas in a desired mask pattern and forming phase shift bands in the phase conflict areas. Phase conflict areas occur in transparent areas of the mask pattern which are in close proximity to one another and which have the same phase. More specifically, the method of the invention includes the steps of: depositing an opaque layer (i.e., chrome) on a transparent substrate, etching openings in the opaque layer to form a pattern of transparent areas and opaque areas, connecting adjacent transparent areas together in the phase conflict areas, and forming phase shift areas in every other transparent area and in the connecting areas.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5079113 (1992-01-01), Ohta et al.
patent: 5126220 (1992-06-01), Tokitomo et al.
patent: 5194344 (1993-03-01), Cathey et al.
patent: 5194345 (1993-03-01), Rolfson et al.
patent: 5194346 (1993-03-01), Rolfson et al.
patent: 5208125 (1993-05-01), Lowrey et al.
patent: 5217830 (1993-06-01), Lowrey
patent: 5225035 (1993-07-01), Rolfson
patent: 5240796 (1993-08-01), Lee et al.
patent: 5281500 (1994-01-01), Cathey et al.
patent: 5288568 (1994-02-01), Cathey, Jr.
patent: 5318868 (1994-06-01), Hasegawa et al.
Lin, Burn J., "Phase Shifting and Other Challenges in Optical Mask Technology", IBM-EF-15 (Sep. 26, 1990).
Wong et al., "Investigating Phase-Shifting Mask Layout Issues Using a CAD Toolkit", IEEE Meeting, Washington, D.C., Dec. 8-11, 1991.

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