Silicon carbide semiconductor apparatus

Details Silicon carbide semiconductor apparatus Silicon carbide semiconductor apparatus

1992-05-14

1994-01-18

Ryan, Patrick J.

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

428446, 428698, 437 34, 437 56, 437 67, 257613, 257746, B32B 900

Patent

active

052798887

ABSTRACT:
High concentration polysilicon is grown on the silicon carbide so as to effect the connection through the polysilicon, thereby to obtain a better wiring construction in the connection between silicon carbide conductor basic plate and wiring.

REFERENCES:
patent: 4095251 (1978-06-01), Dennard et al.
patent: 5086006 (1992-02-01), Asahina
patent: 5124779 (1992-06-01), Furukawa et al.

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