Solar cell and method for producing the same

Details Solar cell and method for producing the same Solar cell and method for producing the same

1992-02-20

1994-01-18

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

437 4, H01L 310368, H01L 3118

Patent

active

052796868

ABSTRACT:
There is disclosed a polycrystalline silicon solar cell, utilizing a continuous polycrystalline silicon film consisting of single crystals grown from a plurality of small nucleation surfaces provided on a non-nucleation surface. The semiconductor junction, providing the photoelectromotive force of the solar cell, is formed on the single crystals, avoiding the areas of grain boundaries formed by mutual contact of the single crystals, in order to eliminate the drawbacks resulting from such boundaries. The semiconductor junction is formed by masking the areas of the grain boundaries with a suitable masking material, such as photoresist.

REFERENCES:
patent: 4431858 (1984-02-01), Gonzalez
patent: 5098850 (1992-03-01), Nishida et al.
"Grain Growth Mechanism of Heavily Phosphorous-Implanted Polycrystalline Silicon" by Yasuo Wada et al., Journal of the Electrochemical Society, vol. 125, No. 9 Sep., 1978 pp. 1499-1504.

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