Semiconductor laser device and a method of producing same

Coherent light generators – Particular active media – Semiconductor

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372 45, 372 46, 372 47, 357 4, 437129, H01S 319

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active

049378350

ABSTRACT:
A seminconductor laser device includes a hetero-junction structure disposed in a groove in a semi-insulating semiconductor substrate having a first conductivity type first cladding layer, a quantum well active layer, and a first or second conductivity type or high resistance second cladding layer. First and second conductivity type impurity regions are selectively produced at opposite sides of an active region of the active layer and at adjacent portions of the substrate, penetrating at least the active layer. The regions of the active layer in the impurity regions are disordered. Electrodes are disposed on the substrate at the respective impurity regions.

REFERENCES:
patent: 4594603 (1986-06-01), Holonyak, Jr.
patent: 4700353 (1987-10-01), Van Gieson et al.
patent: 4788689 (1988-11-01), Tokuda et al.
patent: 4817103 (1989-03-01), Holonyak, Jr. et al.
Makiuchi et al, "AlGaAs/GaAs Lateral Current Injection MQW Laser", Conference on Lasers and Electro-Optics, 1987.
Hirose et al, "AlGaAs MQW Laser with Electrodes on Epi-Layer", Preprint of Autumn Meeting, Japanese Association of Applied Physics, 1987.

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