Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1988-08-03

1990-06-26

Fears, Terrell W.

Static information storage and retrieval

Addressing

36518901, 365200, 371 101, 371 211, G11C 1300

Patent

active

049377906

ABSTRACT:
A semiconductor memory device is disclosed, in which a word line address translation unit, a data line address translation unit, a first spare memory and a second spare memory are provided in addition to a main memory to relieve a defective memory cell in the main memory. Spare word line address signals for selecting a spare word line on the first spare memory are written in the word line address translation unit, spare data line address signals for selecting a spare data line on the second spare memory are written in the data line address translation unit, and each of the word line address translation unit and the data line address translation unit is constructed of an ordinary semiconductor memory of the multi-bit output type.

REFERENCES:
patent: 4745582 (1988-05-01), Fukushi et al.
patent: 4817056 (1989-03-01), Furutani et al.
ISCC Digest of Technical Papers, Feb. 1981, pp. 80-81, "Memories and Redundancy Techniques", Kokkonen et al.
IEEE Journal of Solid State Circuits, vol. S-15, No. 4, Aug. 1980, pp. 672-686, "A 1-Mbit Full Wafer MOS Ram", Egawa et al.

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1130367