Semiconductor device free from the current leakage through a sem

Details Semiconductor device free from the current leakage through a sem Semiconductor device free from the current leakage through a sem

1986-08-22

1990-06-26

Carroll, J.

357 2, 357 54, H01L 4500, H01L 2934

Patent

active

049376519

ABSTRACT:
An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.

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Patent Abstracts of Japan, vol. 8, No. 123 (E-249) [1560], 8th, Jun. 1984; & JP-A-59 35490 (Sanyo Denki K. K.) 2/27/84.

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