Insulated gate transistor operable at a low-drain-source voltage

Details Insulated gate transistor operable at a low-drain-source voltage Insulated gate transistor operable at a low-drain-source voltage

1990-11-13

1991-10-22

Jackson, Jr., Jerome

357 238, 357 51, H01L 2978

Patent

active

050600320

ABSTRACT:
A transistor having a semiconductor substrate of a first conductivity type, a base region of a second conductivity type formed in the semiconductor substrate, a source region of the first conductivity type, a gate electrode formed on the base region between the source region and the semiconductor substrate via a gate insulator film, an additional region of the second conductivity type formed in the semiconductor substrate but separated from the base region, a resistive layer formed in electrical contact with an area of the semiconductor substrate which is separated from the base region and the additional region, a source electrode connected with the source region and a drain electrode connected with the additional region and the resistive layer.

REFERENCES:
patent: 4841345 (1989-06-01), Majumdar
patent: 4901127 (1990-02-01), Chow et al.
Analysis of the Lateral Insulated Gate Transistor, Simpson, et al., Dec. 1985, IEDM, 740-743, Philips Laboratories.
25 AMP, 500 Volt Insulated Gate Transistors, Chang et al, 1983, Dec. IEDM, 83-86, General Electric Company.

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