Fishing – trapping – and vermin destroying
Patent
1988-11-17
1990-06-26
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 38, 437 41, 437 46, 437 89, 437203, 437228, H01L 21203, H01L 21265, H01L 21336
Patent
active
049372025
ABSTRACT:
A field effect transistor is made with a source and drain which are utilized partly as a semiconductor region in a semiconductor body, and partly as a portion of a deposited epitaxial layer. A recess is formed into a substrate of the semiconductor body between the source and drain, and a channel region underlies the recess in the substrate. As a result of this construction, the channel length is independent of variations in the thickness of the epitaxial layer, and the stray capacitances from source and drain to the substrate are small. Moreover, a conductor pattern, separated from the epitaxial layer by an insulating layer, may extend to be on the connection zones of the source and drain, which involves a high packing density. The epitaxial layer, moreover, comprises extra wiring tracks. This gives a greater freedom in design.
REFERENCES:
patent: 4003126 (1977-01-01), Holmes et al.
patent: 4041518 (1977-08-01), Shimizu
patent: 4065783 (1977-12-01), Ouyang
patent: 4084175 (1978-04-01), Ouyang
patent: 4116720 (1978-09-01), Vinson
patent: 4272302 (1981-06-01), Jhabvala
patent: 4609407 (1986-09-01), Masao et al.
Hearn Brian E.
Miller Paul R.
Thomas T.
U.S. Philips Corporation
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