Pseudomorphic HEMT having strained compensation layer

Details Pseudomorphic HEMT having strained compensation layer Pseudomorphic HEMT having strained compensation layer

1990-07-18

1991-10-22

Hille, Rolf

357 16, 357 4, 357 30, H01L 2980, H01L 29161, H01L 2712, H01L 2714

Patent

active

050600303

ABSTRACT:
A pseudomorphic high electron mobility transistor includes a substrate for supporting a semiconductor active region. The semiconductor active region includes a channel layer comprised of InGaAs, which when disposed over said substrate develops an intrinsic lattice tensile strain and charge donor layer comprised of a wide bandgap Group III-V material, said layer being arranged to donate charge to said channel layer. The HEMT further includes a strain compensating layer having an intrinsic lattice compressive strain which is disposed between said channel layer and said substrate. The strain compensating layer has a strain characteristic which compensates for the tensile strain in the channel layer permitting said channel layer to be grow thicker or with high In concentration prior to reaching its so-called critical thickness.

REFERENCES:
Cammarata, R. C. et al., Surface Stress Effects on the Critical Film Thickness for Epitaxy, Appl. Phys. Lett. 55 (12), Sep. 18, 1989, pp. 1197-1198.
Chin, Albert et al., Achievement of Exceptionally High Mobilities in Modulation-Doped Ga.sub.1-x In.sub.x As On InP Using A Stress Compensated Structure, J. Vac. Sci. Technol. B 8(2) May/Apr 90, pp. 364-366.
Vawter, G. Allen, Useful Design Relationships for the Engineering of Thermodynamically Stable Strained-Layer Structures, J. Appl. Phys. 65 (12), Jun. 15, 1989, pp. 4769-4773.
Van Vechten, J. A., New Set of Tetrahedral Covalent Radii, Physical Review B, vol. 2, No. 6, Sep. 15, 1970, pp. 2160-2167.

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