Step cut type insulated gate SIT having low-resistance electrode

Details Step cut type insulated gate SIT having low-resistance electrode Step cut type insulated gate SIT having low-resistance electrode

1990-02-23

1991-10-22

Hille, Rolf

357 234, 357 67, 357 71, H01L 2980

Patent

active

050600290

ABSTRACT:
This invention provides a step cut type insulated gate static induction tsistor having a first main electrode formed in one major surface of a semiconductor substrate, a second main electrode formed in a bottom portion of a U-shaped groove formed in one major surface of a semiconductor substrate, a control electrode formed on a side wall of the U-shaped groove and consisting of a thin insulating film and a polysilicon layer, and a low-resistance electrode of a refractory metal layer or a refractory metal silicide layer formed in at least part of the side wall of the polysilicon layer of the control electrode.

REFERENCES:
patent: 4392150 (1983-07-01), Courreges
patent: 4470059 (1984-09-01), Nishizawa et al.
patent: 4510670 (1985-04-01), Schwabe et al.
patent: 4566172 (1986-01-01), Bencuya et al.
patent: 4707723 (1987-11-01), Okamoto et al.
patent: 4845539 (1989-07-01), Inoue
patent: 4923823 (1990-05-01), Kohno

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