Storage capacitor for DRAM memory cell

Details Storage capacitor for DRAM memory cell Storage capacitor for DRAM memory cell

1997-09-12

1999-02-02

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613215, 257300, 257311, H01G 406, H01L 2108

Patent

active

058673628

ABSTRACT:
A storage capacitor structural configuration for memory cell units of DRAM devices and a process for constructing the capacitor. The capacitor includes a first electrode and a second electrode that are each electrically conducting layers, and a storage dielectric that is a dielectric layer sandwiched between the two electrodes. The silicon substrate of the device has formed thereon a field oxide layer and a transistor including a gate and a pair of source/drain regions. A first dielectric layer covers the transistor and includes a contact opening over one of the source/drain regions. The first electrode includes a first electrically conducting layer formed inside the contact opening and covering the revealed surface of the source/drain region and the first dielectric layer. A second electrically conducting layer having a rugged surface is formed on the surface of the first electrically conducting layer. A number of deep grooves are formed in the second and first electrically conducting layers, forming a grid-like configuration. The storage dielectric includes a second dielectric layer covering the surface of the grid-like configuration of the second and first electrically conducting layers. The second electrode includes a third electrically conducting layer that covers the surface of the storage dielectric.

REFERENCES:
patent: 5254503 (1993-10-01), Kenney
patent: 5447878 (1995-09-01), Park et al.
patent: 5608247 (1997-03-01), Brown

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