Substrate contact for integrated spiral inductors

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257108, 257422, H01L 2900, H01L 2974, H01L 31111

Patent

active

059362995

ABSTRACT:
An inductor structure includes an inductor spiral coil formed on a substrate; and a substrate contact connected to the substrate and disposed within a predetermined distance to the inductor spiral coil to increase the quality-factor (Q) characteristics associated with the inductor structure, and also does not increase eddy currents in the substrate. The substrate contact provides for implementation of the inductor structure as a spiral inductor which is integrated on a silicon substrate. The substrate contact determines the energy potential substantially adjacent to the inductor for reducing the noise level. In an implementation of an inductor in an RF circuit, the substrate contact contributes to providing an increased Q.

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