Multilevel interconnect structure with air gaps formed between m

Details Multilevel interconnect structure with air gaps formed between m Multilevel interconnect structure with air gaps formed between m

1997-03-04

1999-08-10

Everhart, Caridad

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257760, 257644, H01L 2951

Patent

active

059362952

ABSTRACT:
A method for forming air gaps 22 between metal leads 16 of a semiconductor device and semiconductor device for same. A metal layer is deposited on a substrate 12. The metal layer is etched to form metal leads 16. A disposable solid layer 18 is deposited between the metal leads 16. A porous dielectric layer 20 is deposited on the disposable solid layer 18 and the tops of the leads 16, and the disposable solid layer 18 is removed through the porous dielectric layer 20, to form air gaps 22 between the metal leads 16 beneath the porous dielectric layer 20. The air gaps have a low-dielectric constant and result in reduced sidewall capacitance of the metal leads.

REFERENCES:
patent: 4652467 (1987-03-01), Brinker et al.
patent: 4797294 (1989-01-01), Berg
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5119164 (1992-06-01), Sliwa, Jr. et al.
patent: 5266126 (1993-11-01), Deguchi
patent: 5276414 (1994-01-01), Fujimoto et al.
patent: 5310700 (1994-05-01), Lien et al.
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5364818 (1994-11-01), Ouellet
patent: 5407860 (1995-04-01), Stoltz et al.
patent: 5461003 (1995-10-01), Havemann et al.
patent: 5470802 (1995-11-01), Gnade et al.
patent: 5472913 (1995-12-01), Havemann et al.
patent: 5486493 (1996-01-01), Jeng
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5494858 (1996-02-01), Gnade et al.
patent: 5523615 (1996-06-01), Cho et al.
patent: 5561318 (1996-10-01), Gnade et al.

Affiliated with

Also associated with

Rating

Multilevel interconnect structure with air gaps formed between m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilevel interconnect structure with air gaps formed between m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilevel interconnect structure with air gaps formed between m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1122571