Semi-insulating compound semiconductor device

Details Semi-insulating compound semiconductor device Semi-insulating compound semiconductor device

1992-11-25

1994-09-13

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

257174, 257328, 257355, 257356, 257546, 257547, H01L 2704

Patent

active

053471482

ABSTRACT:
A semi-insulating compound semiconductor device includes an input terminal portion having a protection diode connected thereto and an element formation region and which is provided with a conduction region having the highest potential in the semiconductor device disposed between the input terminal portion and the element formation region. With such an arrangement, low-frequency oscillation of the drain current I.sub.D or drain conductance g.sub.m due to a leak age current from the protection diode connected to the input terminal portion can be prevented from occurring and thus the semi-insulating compound semiconductor device can operate satisfactorily with stabilized characteristics.

REFERENCES:
patent: 4044373 (1977-08-01), Nomiya et al.
patent: 4276556 (1981-06-01), Enomoto et al.

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