Multiterminal lateral S-shaped negative differential conductance

Details Multiterminal lateral S-shaped negative differential conductance Multiterminal lateral S-shaped negative differential conductance

1993-11-09

1994-09-13

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257192, 257 6, H01L 2980

Patent

active

053471415

ABSTRACT:
The present invention (or multi-terminal lateral hot-electron transistor, ET) is based on a high electron mobility (hot-electron) transistor with a split-gate arrangement similar to those used in quantum wave guide devices. In the present invention, the depletion below the split gate is used to form, and control, potential barriers between the source and drain contacts. The devices, according to the present invention, exhibit pronounced SNDC which is controlled by the gate bias.

REFERENCES:
patent: 4903092 (1990-02-01), Luryi et al.
patent: 4942438 (1990-07-01), Miyamoto
patent: 5192986 (1993-03-01), Ando
Hess et al, Journal of Applied Physics 60, p. 3775, 1986.
Emanuel et al, Solid State Electronics 31, p. 589, 1988.

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