Semiconductor device turned on and off by light

Details Semiconductor device turned on and off by light Semiconductor device turned on and off by light

1984-11-27

1988-01-05

Edlow, Martin H.

357 43, 357 2314, 357 30, 357 2312, 357 86, H01L 2974, H01L 2702, H01L 2978, H01L 2714

Patent

active

047179473

ABSTRACT:
A semiconductor device has a main GTO thyristor section, an auxiliary GTO thyristor section and a MOS transistor section. The main GTO thyristor section is turned on and off in accordance with a gate signal supplied to its gate terminal. The auxiliary GTO thyristor section supplies an igniting signal to the gate of the main GTO thyristor in accordance with an optical signal. The MOS transistor supplies an extinguishing signal to the gate of the main GTO thyristor section in accordance with an optical signal supplied to it.

REFERENCES:
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patent: 3893153 (1975-07-01), Page et al.
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patent: 4604638 (1986-08-01), Matsuda
1984 National Meeting of Denki-Gakkai, A Collection of Lectures, Sec. 7, "Power Semiconductor Element for Self-Extinction and its Application" S7-13 through S7-16 (SI Thyristor) N. Tamamushi (Transliterated) et al.
J. Nishizawa et al., "Totally Light Controlled Static Induction Thyristor," ESS DERC, Sep. 10-13, 1984.
J. Nishizawa et al., "Totally Light Controlled Thyristor-Optically Triggerable and Optically Quenchable Static Induction Photo-Thyristor," Conference on Solid-State Devices and Materials, Kobe, Aug. 30-Sep. 1, 1984.

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