Double half via antifuse

Details Double half via antifuse Double half via antifuse

1995-06-07

1999-02-02

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, H01L 2900

Patent

active

058669370

ABSTRACT:
An antifuse comprises a substantially planar conductive lower electrode covered by a first layer of silicon nitride. A layer of amorphous silicon is disposed over the silicon nitride layer. A first dielectric layer is disposed over the surface of the amorphous silicon layer and has a first aperture therethrough communicating with the amorphous silicon layer. A second layer of silicon nitride is disposed over the first dielectric layer and in the first aperture. A conductive upper electrode, such as a layer of titanium nitride, is disposed over the second layer of silicon nitride. A second dielectric layer is disposed over the surface of the conductive upper electrode and has a second aperture therethrough in alignment with the first aperture communicating with the conductive upper electrode. An overlying metal layer is disposed over the surface of the second dielectric layer and in the second aperture making electrical contact with the conductive upper electrode.

REFERENCES:
patent: 4732865 (1988-03-01), Evans et al.
patent: 4948459 (1990-08-01), van Laarhoven et al.
patent: 5427979 (1995-06-01), Chang
patent: 5440167 (1995-08-01), Iranmanesh

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