Method of making alternate metal/source virtual ground flash EPR

Details Method of making alternate metal/source virtual ground flash EPR Method of making alternate metal/source virtual ground flash EPR

1992-02-04

1994-09-13

Thomas, Tom

Fishing, trapping, and vermin destroying

437 43, 437 48, 437200, 437229, H01L 2170

Patent

active

053468422

ABSTRACT:
The present invention provides structure for and a method of fabricating an alternate metal/source virtual ground flash EPROM cell array. The method provides a contactless array architecture, but the cell structure is such that it allows the use of conventional T-shaped ETOX cell programming techniques. Thus, the array provides the ETOX programming and erase mechanism, but with much smaller cell size and easier scalability and with improved drain turn-on immunity.

REFERENCES:
patent: 4874715 (1989-10-01), Paterson
patent: 5149665 (1992-09-01), Lee
Gautam Verma et al.; "Reliability Performance of Etox Based Flash Memories".
B. J. Woo, et al.; "A Poly-Buffered Face Technology for High Density Flash Memories"; VLSI Symposium 1991.
B. J. Woo et al.; "A Novel Memory Cell Using Flash Array Contactless EPROM (Face) Technology"; IEEE 1990, IEDM 90-91.
Yosiaki S. Hisamune et al.; "A 3.6 .mu.M.sup.2 Memory Cell Structure for 16MB EPROMs"; IEDM 1989 p. 583.
Albert Bergemont et al.; "A High Performance CMOS Process for Submicron 16 Mb EPROM"; 1989 IEEE IEDM p. 591.

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