Method of producing heterojunction bipolar transistor having nar

Details Method of producing heterojunction bipolar transistor having nar Method of producing heterojunction bipolar transistor having nar

1992-12-07

1994-09-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437131, 437192, 148DIG10, 148DIG72, 257183, 257197, H01L 21265, H01L 2970

Patent

active

053468406

ABSTRACT:
A heterojunction bipolar transistor includes a tungsten layer formed on a base layer. An insulating sidewall is formed on the base layer and along a vertical wall of an emitter layer formed on the base layer. An end of the tungsten layer faces a base-emitter heterojunction through the sidewall.

REFERENCES:
patent: 4885614 (1989-12-01), Furukawa et al.
patent: 5006912 (1991-04-01), Smith et al.
"Integrated Schottky Diodes In HBT Tech.", IBM Tech. Dis. Bulletin, vol. 31, No. 5 Oct. 1988.
"N-Type Resistors In GaAs HBT Tech.", IBM Tech. Dis. Bulletin, vol. 31, No. 5, Oct. 1988.
"Self-Isolating Very High Performance HBT Struct. & Process for its realization", IBM Tech. Dis. Bulletin, vol. 32, No. 10B Mar. 1990.

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