Semiconductor integrated circuit device having fundamental cells

Details Semiconductor integrated circuit device having fundamental cells Semiconductor integrated circuit device having fundamental cells

1996-08-09

1999-02-02

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

257211, H01L 2710

Patent

active

058669230

ABSTRACT:
A semiconductor integrated circuit having a plurality of fundamental cells respectively composed of a pair of p-channel field effect transistors and a pair of n-channel field effect transistors is disclosed. Elements of each fundamental cell are connected by lines, the fundamental cells are connected by lines, and a circuit is formed. The p-channel field effect transistors are formed in symmetry to each other, the n-channel field effect transistors are formed in symmetry to each other, one p-channel field effect transistor and one n-channel field effect transistor are formed in symmetry to each other, and the other p-channel field effect transistor and the other n-channel field effect transistor are formed in symmetry to each other. Also, a gate of each field effect transistor is formed in an H shape, and a line pitch between lines of a second layer is shorter than an arranging interval (or bulk pitch) between contact portions respectively connecting a line of a first layer and an element of the fundamental cell.

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