Schmitt circuit with MIS field effect transistors

Details Schmitt circuit with MIS field effect transistors Schmitt circuit with MIS field effect transistors

1986-09-26

1987-08-18

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307279, 307359, 307448, H03K 329, H03K 326, H03K 5153, H03K 19017

Patent

active

046879552

ABSTRACT:
This invention provides a Schmitt circuit comprising: a first transistor of depletion type, in which the drain is connected to a first power source and the gate and the source are connected to each other; second and third transistors of enhancement type are connected in series between the node where the gate and the source of the first transistor are connected together and a second power source, and the gates of the second and third transistors are connected to each other; a fourth transistor of enhancement type, in which the drain is connected to the first power source and the gate is connected to the node where the gate and source of the first transistor are connected together; a fifth transistor of depletion type, in which the drain is connected to the source of the fourth transistor and the gate and the source are connected together and are connected to the node where the source of the second transistor and the drain of the third transistor are connected together; an input terminal inputted an input signal at the node where the gates of the second and third transistors are connected together; and an outut terminal outputting an output signal from the node where the gate and source of the first transistor are connected together.

REFERENCES:
patent: 4475048 (1984-10-01), Miyake et al.
patent: 4506168 (1985-03-01), Uya

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