Power semiconductor devices with increased turn-off current rati

Details Power semiconductor devices with increased turn-off current rati Power semiconductor devices with increased turn-off current rati

1984-12-05

1987-02-24

Clawson, Jr., Joseph E.

357 2314, 357 34, 357 38, 357 43, 357 86, H01L 2978

Patent

active

046461175

ABSTRACT:
Power semiconductor devices having active regions of multicellular construction achieve increased turn-off current capacity through limitation of the on-state current density in peripheral cells of the active region. Devices that may benefit from the present invention include MOSTOTs, IGTs, GTOs, and bipolar transistors, by way of example.

REFERENCES:
patent: 4145700 (1979-03-01), Jambotkar
patent: 4417385 (1983-11-01), Temple
patent: 4443810 (1984-04-01), Yatsuo et al.
patent: 4532534 (1985-07-01), Ford et al.
patent: 4567502 (1986-01-01), Nakagawa et al.
B. J. Buliga et al., "The Insulated Gate Rectifier (IGR): A New Power Switching Device", IEDM 82 (Dec. 1982), pp. 264-267.

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