Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1993-04-01
1994-09-13
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
156643, C30B 2520, C30B 2504
Patent
active
053465814
ABSTRACT:
In a preferred embodiment, the disclosed method of making a compound semiconductor (e.g., InP, GaAs) device comprises etching of a semiconductor body by exposure of the body to a chemical beam or beams that comprise an etching medium (e.g., PCl.sub.3, AsCl.sub.3) and a precursor chemical (e.g., trimethylindium, trimethylgallium), followed by chemical beam epitaxy (CBE) growth of semiconductor material on the etched surface without exposure of the semiconductor body to the ambient atmosphere. Presence of the precursor chemical in the etching beam can result in significantly improved surface morphology, with attendant high quality re-growth. Multiple etching/growth sequences are facilitated by the almost instantaneous (e.g., about 1s) switching between the etching and growth modes that is possible in a reactor according to the invention.
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AT&T Bell Laboratories
Breneman R. Bruce
Pacher Eugen E.
Paladugu Ramamohan Rao
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