Semiconductor devices having field-relief regions

Details Semiconductor devices having field-relief regions Semiconductor devices having field-relief regions

1986-05-01

1987-02-24

Larkins, William D.

357 22, 357 16, 357 55, 357 54, 357 90, 357 53, H01L 2980

Patent

active

046461159

ABSTRACT:
Separate areas of an active unipolar barrier, e.g. a Schottky barrier, of a semiconductor device are located between closely-spaced field-relief regions which provide the device with an improved voltage blocking characteristic. The flow of minority carriers into the adjacent body portion under forward bias is restricted by providing, at least at the areas of the field-relief regions, a layer of different material from that of the body portion and from that of the unipolar barrier-forming means. The layer of different material may form a high-impedance electrical connection with the field-relief regions, and/or it may form with the body portion a heterojunction such as, for example, a Schottky barrier of higher barrier height, a barrier between different band gap materials or a MIS structure, which heterojunction forms part of the field-relief regions.

REFERENCES:
patent: 3581151 (1971-05-01), Boyle et al.
patent: 3737701 (1975-06-01), Hoeberechts et al.
patent: 3924320 (1975-12-01), Altman et al.
patent: 4149174 (1979-04-01), Shannon
patent: 4288800 (1981-09-01), Yoshida et al.
patent: 4338618 (1982-07-01), Nishizawa
patent: 4521795 (1985-06-01), Coe et al.

Affiliated with

Also associated with

Rating

Semiconductor devices having field-relief regions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices having field-relief regions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices having field-relief regions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-111727