Method of performing high-efficiency machining by high-density r

Details Method of performing high-efficiency machining by high-density r Method of performing high-efficiency machining by high-density r

1997-03-11

1999-08-10

Paschall, Mark

Electric heating

Metal heating

By arc

21912152, 21912143, 21912139, 21912151, 219 691, 83 16, B23K 1000

Patent

active

059354607

DESCRIPTION:

BRIEF SUMMARY
BACKGROUND OF THE INVENTION

1. Field of the Invention
The present invention relates to a method of performing high-efficiency machining by high-density radical reaction using a rotating electrode and a device for performing the method, and more particularly to a method of performing high-efficiency machining by high-density radical reaction using a rotating electrode, a device for performing the method and a rotating electrode used therefor, which is capable of machining with a high accuracy and a high efficiency without introducing a defect or a heat-affected layer into a semiconductor such as silicon monocrystal, a conductor, or an insulator such as glass or ceramics.
2. Description of the Related Art
Up to now, in cutting silicon monocrystal, there has been used, for example, a dicing machining method by a diamond wheel. Since this machining principle uses brittle destroy due to a fine crack, the machined surface is not crystallographically controlled, and a deep damage is always given to the machined surface to the degree of the thickness of the finished machining. In the case of manufacturing a semiconductor device using a wafer thus cut, a yield is poor, and its electrical performance is deteriorated. Also, the machining principle is one factor for measuring the limit of the integrated degree. This fact is applicable to machining of all of a variety of functional materials.
Under the circumstances, as disclosed in Japanese Patent Unexamined Publication No. Hei 1-125829 (U.S. Pat. No. 4,960,495), there has been proposed a non-strain precision machining method (plasma CVM method) in which the neutral radical of a reactive gas caused by high-density plasma generated by an electrode to which a high frequency is applied is supplied to a machined surface of a workpiece, and volatile material generated by radical reaction of the neutral radical with atoms or molecules constituting the machined surface is gasified so as to be removed, thereby being capable of performing machining with a high accuracy without introducing a defect or a heat-affected layer into a semiconductor such as silicon monocrystal, a conductor, or an insulator such as glass or ceramics.
In this specification, "CVM" is an abbreviation of "chemical vaporization machining".
In other words, the CVM is a method in which a workpiece and an electrode are disposed in an atmospheric gas containing a reaction gas, and a high-frequency voltage is applied between the workpiece and the electrode, to thereby produce the neutral radical based on the reaction gas in the vicinity of the electrode. In this situation, in the case where the machining electrode is formed of a wire electrode, the workpiece can be subjected to cutting machining or grooving machining; in the case where the machining electrode is formed of a planer electrode, the workpiece can be subjected to smoothing machining or specular machining; and in the case where the machining electrode is formed of a complicatedly shaped electrode, the workpiece can be subjected to transfer machining by which the shaped of the electrode is transferred to the workpiece.
In the case of cutting the workpiece, a structure using the wire electrode is effective. However, in the cutting machining using a normal wire electrode, the reaction gas cannot be sufficiently supplied into the cut groove which is formed during its process, and an electric power supplied to the electrode is low. Also, in the specular machining using the planar electrode having a large-area smooth surface, the reaction gas cannot be sufficiently supplied to the center of a machining gap, to thereby lower the density of the neutral radical on its portion. As a result, in case of the cutting machining, the machining speed is lowered with the progress of the machining, and in case of the specular machining, a difference in machining rate between the peripheral portion and the central portion of the electrode causes the nonuniformity of the amount of machining.
For that reason, the present inventor(s) have proposed a cutting method using a

REFERENCES:
patent: 3663787 (1972-05-01), Haswell, III et al.
patent: 4641007 (1987-02-01), Lach
patent: 4691090 (1987-09-01), Garlanov et al.
patent: 5279623 (1994-01-01), Wantabe et al.

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