Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-03-25
1998-08-18
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 40, 257 60, 257506, H01L 29786, H01L 2712
Patent
active
057961212
ABSTRACT:
A thin film transistor is described incorporating a gate electrode, a gate insulating layer, a semiconducting channel layer deposited on top of the gate insulating layer, an insulating encapsulation layer positioned on the channel layer, a source electrode, a drain electrode and a contact layer beneath each of the source and drain electrodes and in contact with at least the channel layer, all of which are situated on a plastic substrate. By enabling the use of plastics having low glass transition temperatures as substrates, the thin film transistors may be used in large area electronics such as information displays and light sensitive arrays for imaging which are flexible, lighter in weight and more impact resistant than displays fabricated on traditional glass substrates. The thin film transistors are useful in active matrix liquid crystal displays where the plastic substrates are transparent in the visible spectrum. Enablement of the use of such plastics is by way of the use of polymeric encapsulation films to coat the surfaces of the plastic substrates prior to subsequent processing and the use of novel low temperature processes for the deposition of thin film transistor structures.
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International Business Machines - Corporation
Munson Gene M.
Strunck Stephen S.
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