Thin-film semiconductor device including a semiconductor film wi

Details Thin-film semiconductor device including a semiconductor film wi Thin-film semiconductor device including a semiconductor film wi

1995-07-25

1998-08-18

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 72, H07L 29786

Patent

active

057961166

ABSTRACT:
A thin film transistor includes: a substrate; a gate electrode, a source electrode and a drain electrode formed above the substrate; and an insulating film and a semiconductor film formed between the gate electrode, and the source electrode and the drain electrode, wherein the semiconductor film includes an i-type silicon film, and a portion or the semiconductor film within 50 nm from the insulating film has a microcrystalline structure having a conductivity of 5.times.10.sup.-10 S/cm or more.

REFERENCES:
patent: 4322253 (1982-03-01), Pankove et al.
patent: 4464415 (1984-08-01), Yamazaki
patent: 4581620 (1986-04-01), Yamazaki et al.
patent: 4814842 (1989-03-01), Nakagawa et al.
patent: 4835059 (1989-05-01), Kodato
patent: 4920917 (1990-05-01), Nakatani et al.
patent: 5017308 (1991-05-01), Iijima et al.
patent: 5313077 (1994-05-01), Yamazaki
patent: 5315132 (1994-05-01), Yamazaki
patent: 5318919 (1994-06-01), Noguchi et al.
patent: 5340999 (1994-08-01), Takeda et al.
patent: 5367180 (1994-11-01), Asai et al.
patent: 5473168 (1995-12-01), Kawai et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5576555 (1996-11-01), Yamanobe et al.
H. Shirai et al., Jpn. J. Appl. Phys., 30(4B)(1991) L679 "Role of Atomic Hydrogen During Growth of Hydrogenated Amorphous Silicon in the `Chemical Annealing`".
H. Shirai et al., Tech. Digest of Int'l. PVSEC-5 (Kyoto, Japan, 1990), Session A-lpB-2, "The Concept of `Chemical Anealing` for the Improvement of the Stability in Si-network".
D. Das et al., Jpn. J. Appl. Phys., 30(2B)(1991) L239, "narrow Band-Gap a Si:H with Improved Minority Carrier-Transport Prepared by Chemical Annealing".
Otobe et al, "Preparation of Microcrystalline Silicon Films by Very-High-Frequency Digital Chemical Vapor Deposition", Jpn. J. Appl. Phys., vol. 31, pp. 1948-1952, 1992.
Nomoto et al, "Role of Hydrogen Atoms in the Formation Process of Hydrogenated Microcrystalline Silicon", Japanese Journal of Applied Physics, vol. 29, No. 8, pp. L1372-L1375, 1990.
Nakazawa et al, "Polycrystalline Silicon Film Formation at Low Temperature Using a Microcrystalline Silicon Film", Japanese Journal of Applied Physics, vol. 28, No. 4, pp. 569-572, 1989.
Johnson et al, "Hydrogen Incorporation in Undoped Microcrystalline Silicon", Appl. Phys. Lett., vol. 53, No. 17, pp. 1626-1627, 1988.
Miyazaki et al, "Effects of Growth Rate on the Microcrystalline Characteristics of Plasma-Deposited .mu.c-Si:H", Solar Energy Materials, vol. 11, pp. 85-95, 1984.
Matsuda, "Formation Kinetics and Control of Microcrystalline In .mu.c-Si:H From Glow Discharge Plasma", Journal of Non-Crystalline Solids, 50 & 60, pp. 767-774, 1983.
Patent Abstracts of Japan, vol. 014, No. 005 (E-869), 9 Jan. 1989 & JP 01 253271A (Fuji Electric Co Ltd), 9 Oct. 1989.
Patent Abstracts of Japan, vol. 012, No. 153 (E-607), 11 Mei 1988 & JP 62 268128 A (Sharp Corp), 20 Nov. 1987.
Shen et al, "Thin Boron Doped Microcrystalline Silicon Films", Solar Energy Materials and Solar Cells, vol. 30, NR.2, pp. 139-145, 1 Jul. 1993, XP000381983.
Wang et al, "The Preparation of Microcrystalline Silicon (UC-SI) Thin Films by Remote Plasma-Enhanced Chemical Vapor Deposition", 1 Mei 1991, Journal of Vacuum Science and Technology: Part A, vol. 9, NR. 3 Part 01, pp. 444-449 XP000359393.
Rajeswaran et al, "Substrate Temperature Dependence of Microcrystallinity in Plasma-Deposited, Boron-Doped Hydrogenated Silicon Alloys", Applied Physics Letters, 1 Dec. 1983, USA, vol. 43, NR. 11, pp. 1045-1047.

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