Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1997-09-02

1999-08-10

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723I, 20429808, 20429834, H05H 100

Patent

active

059353732

ABSTRACT:
This invention relates to an antenna division RF induction plasma generation apparatus, and has as its object to prevent hunting between RF antennas, and to improve control of the etching selectivity and the etching shape. In an antenna division RF induction plasma apparatus, an RF antenna is arranged on an insulator of a processing chamber. The antenna is constituted by a first RF antenna, and a second RF antenna arranged at a predetermined interval therefrom. A substrate is placed on a lower electrode arranged in the processing chamber. RF powers having phases controlled are applied to the first and second RF antennas and/or the lower electrode. As the RF power, the RF power of continuous waves or an RF power pulse train can be employed.

REFERENCES:
patent: 5614060 (1997-03-01), Hanawa
patent: 5683538 (1997-11-01), O'Neill et al.
patent: 5685942 (1997-11-01), Ishii
patent: 5824606 (1998-10-01), Dible et al.

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