Method of fabricating metal line structure

Details Method of fabricating metal line structure Method of fabricating metal line structure

Filed on

1996-04-18

Date issued

1998-08-18

Examiner

Niebling, John

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437190, 437192, 437195, 437247, H01L 2129

Type

Patent

Status

active

Patent number

057957967

Description

ABSTRACT:
A method of fabricating a metal line includes the steps of preparing a semiconductor substrate, depositing a first metal on the semiconductor substrate, heat-treating the first metal to form a first metal nitride layer, depositing a second metal on the first metal nitride layer, heat treating the second metal, depositing a third metal on the second metal, and heat treating both the third metal and the second metal to form a metal insulating layer in which the second and the third metals are mixed. The method of fabricating increases the area occupied by the metal line in a contact hole, decreases contact resistance, and increases the speed of the device.

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patent: 5529954 (1996-06-01), Iijima et al
patent: 5547901 (1996-08-01), Kim et al.
S. Wolf, "Silicon Processing for the VLSI Era,vol. 2", Lattice Press, p. 132, 1990.
Olowaolafe, J.O. et al., "Effects of oxygen in TiN.sub.x on the diffusion of Cu in Cu/TiN/Al and Cu/TiN.sub.x /Si structures", Appl. Phys. Lett 58(5): 469-471 (1991).
Kobeda, E. et al., "Diffusion barrier properties on TiN films for submicron silicon bipolar technologies", J. Appl. Phys. 72(7) 2743-2748 (1992).
Cho, James S.H. et al., "Reliability of CVD Cu Buried Interconnections", IEDM (93): 265-268. (1993).

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